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Switching Diodes
MA3V175E, MA3V176E (MA175WK, MA176WK)
Silicon epitaxial planar type
Unit : mm
For switching circuits I Features
* Short reverse recovery time trr * Small terminal capacitance, Ct
4.00.2 (0.8) 3.00.2
2.00.2
I Absolute Maximum Ratings Ta = 25C
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current MA3V175E MA3V176E MA3V175E MA3V176E Single Double Single Double IFSM Tj Tstg IFM IF VRM Symbol VR Rating 40 80 40 80 100 150 225 340 500 750 150 -55 to +150 C C mA mA mA
1
Unit V
0.45+0.20 -0.10 (2.5) (2.5) 0.45+0.20 -0.10 0.70.1
V
15.60.5
(0.8)
0.75 max.
7.6 2 3
1 : Anode 2 : Cathode 3 : Anode NS-B1 Package
Internal Connection
Non-repetitive peak Single forward surge current* Double Junction temperature Storage temperature Note) * : t = 1 s
1
2
3
I Electrical Characteristics Ta = 25C
Parameter Reverse current (DC) MA3V175E MA3V176E Forward voltage (DC) Reverse voltage (DC) MA3V175E MA3V176E Terminal capacitance Reverse recovery time* Ct trr VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 VF VR Symbol IR VR = 35 V VR = 75 V IF = 100 mA IR = 100 A 40 80 4 3 pF ns Conditions Min Typ Max 0.1 0.1 1.2 V V Unit A
Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit
DUT
Input Pulse
tr Sampling Oscilloscope Ri = 50 tP 10% 90% tp = 100 ns tr = 0.6 ns = 0.05 0 IF
Output Pulse trr
t Irr = 0.1*IR IF = 10 mA VR = 6 V RL = 100
IF
Rs = 50 V = VR + IR*RS
Note) The part numbers in the parenthesis show conventional part number.
180
Switching Diodes
IF V F
103 102
MA3V175E, MA3V176E
IR V R
MA3V175E 102 Ta = 125C
IR V R
MA3V176E
102
Forward current IF (mA)
10
Ta = 125C
10
Reverse current IR (A)
Reverse current IR (A)
10
1
75C
1
75C
1
Ta = 125C 75C 25C
10-1 25C
10-1 25C 10-2
10-1
- 20C
10-2
10-2
0
0.2
0.4
0.6
0.8
1.0
1.2
10-3
10-3 0 20 40 60 80 100 120
0
20
40
60
80
100
120
Forward voltage VF (V)
Reverse voltage VR (V)
Reverse voltage VR (V)
VF Ta
1.2
IR T a
102 MA3V175E 102
IR T a
MA3V176E
1.0
10
10
Forward voltage VF (V)
Reverse current IR (A)
Reverse current IR (A)
0.8
VR = 80 V 1 40 V 10-1
1 VR = 40 V 10-1 20 V
0.6
IF = 10 mA 3 mA 1 mA 0.1 mA
0.4
0.2
10-2
10-2
0
-40
10-3
0 40 80 120 160
-40
0
40
80
120
160
10-3
-40
0
40
80
120
160
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Ambient temperature Ta (C)
Ct VR
10 8 6 f = 1 MHz Ta = 25C
Terminal capacitance Ct (pF)
4
2
1 0.8 0.6 0.4
0.2
10
0
4
8 12 16 20 24 28 32 36 40
Reverse voltage VR (V)
181
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(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company.
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited.
2001 MAR

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